RQ6E050AT -30V -5A P-Channel MOSFETs

RQ6E050AT having 5A of Drain current and 30V capabilities, this P Channel Power Mosfet is available in small package and can be used for space saving applications. It offers Low ON resistance and superior gate threshold voltage to operate this mosfet from any microcontroller at any voltage levels.

Features of RQ6E050AT –

1. -30V Drain to Source Voltage (VDSs)
2. Minimum Threshold voltage : -1.0V(Min), -2.5V (Max). Gate to Source Voltage is ±20V.
3. -5A of Continuous Current.
4. Logic Driven Mosfet. Can be controlled by a 3.3V or 5V microcontroller unit.
5. 27mR On Resistance

Pin configuration of RQ6E050AT –

Attributes of RQ6E050AT MOSFET –

MFR: ROHM
MFR-PN: RQ6E050AT
PACKAGE: SOT-23-6

Design Resources for Faster Integration

Package Contains –

1x RQ6E050AT