BSS8402DVV Dual N+P Channel MOSFET (SOT-363)

         The BSS8402DVV from Diodes Incorporated is a compact complementary MOSFET pair that integrates one N-channel and one P-channel transistor into a single ultra-small SOT-363 package.

Designed for efficient switching and low-power applications, this device provides low on-resistance, fast switching performance, and logic-level gate operation. It supports drain-source voltages up to 60V (N-channel) and 50V (P-channel), making it suitable for portable electronics and power management systems.

With low gate threshold voltage and low input capacitance, it ensures efficient operation in signal switching and load-driving circuits.

Its space-saving footprint makes it ideal for high-density PCB designs.

Features of BSS8402DVV Dual N+P Channel MOSFET (SOT-363)

• • Dual MOSFET (1 N-channel + 1 P-channel)

  • Drain-source voltage:

    • N-channel: 60V

    • P-channel: 50V

  • Continuous drain current:

    • 115mA / 130mA

  • Low RDS(on) (~10Ω @ 5V)

  • Low gate threshold voltage (~2V)

  • Fast switching performance

  • Low input capacitance (~50pF)

  • Compact SOT-363 package

  • Low power dissipation (200mW)

Specifications of BSS8402DVV Dual N+P Channel MOSFET (SOT-363)

Applications

• Load switching

• Signal switching

• Power management circuits

• Analog switches

• DC-DC control circuits

• Portable devices

Package Contains –

1x BSS8402DVV Dual N+P Channel MOSFET (SOT-363)