RQ6E050AT-30V-5A P-Channel MOSFETs
The RQ6E050AT is a P-Channel MOSFET optimized for high-efficiency switching and low conduction losses. With a maximum drain-source voltage of –30V and continuous drain current of –5A, it provides excellent performance for DC load control, battery protection, portable devices, and power distribution circuits. The device features low R<sub>DS(on)</sub>, fast switching speed, and high reliability, making it ideal for compact and energy-efficient designs.
Specifications of RQ6E050AT-30V-5A P-Channel MOSFETs –
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Type: P-Channel MOSFET
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Drain-Source Voltage (V<sub>DS</sub>): –30V
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Continuous Drain Current (I<sub>D</sub>): –5A
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Gate Threshold Voltage (V<sub>GS(th)</sub>): Typically –1V to –3V
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R<sub>DS(on)</sub>: Low, optimized for minimal power loss (varies by V<sub>GS</sub>)
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Package Type: Generally SMD (ex: SOP, TSOP, DFN depending on manufacturer version)
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Operation Mode: Enhancement type
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Fast switching capability
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High power dissipation capability
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High reliability and rugged construction
Applications of RQ6E050AT-30V-5A P-Channel MOSFETs –
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Battery-powered devices
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High-side load switching
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DC load control
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Power management modules
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Consumer electronics
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Portable devices
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Reverse polarity protection
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Low-voltage DC motor control
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LED drivers and power rails
Pin configuration of RQ6E050AT –

Attributes of RQ6E050AT MOSFET –
MFR: ROHM
MFR-PN: RQ6E050AT
PACKAGE: SOT-23-6
Design Resources for Faster Integration
Package Contains –
1x RQ6E050AT





